1999. 11. 16 1/2 semiconductor technical data KTA1703 epitaxial planar pnp transistor revision no : 4 high voltage application. dc-dc converter. low power switching regulator. features high breakdown voltage. : v ceo =-400v low collector saturation voltage : v ce(sat) =-1v(max.), (i c =-100ma, i b =-10ma) high speed switching. maximum rating (ta=25 1 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.1 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 14.0 min 2.3 0.1 0.75 0.15 1.6 3.4 max b 1 23 + _ + _ + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe classification o:60 120, gr:100 200 characteristic symbol rating unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -7 v collector current dc i c -0.5 a pulse i cp -1 base current i b -0.25 a collector power dissipation ta=25 1 p c 1.5w w tc=25 1 10w junction temperature t j 150 1 storage temperature t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector base voltage v (br)cbo i c =-100 a, i e =0 -400 - - v collector emitter voltage v (br)ceo i c =-1ma, i b =0 -400 - - collector cutoff current i cbo v cb =-400v, i e =0 - - -10 a emitter cutoff current i ebo v eb =-5v, i c =0 - - -10 dc current gain h fe (note) v ce =-5v, i c =-100ma 60 - 200 - collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - - -1 v base-emitter saturation voltage v be(sat) i c =-100ma, i b =-10ma - - -1.2 switching time turn on time t on i c =-100ma, r l =1.5k u i b1 =-10ma, i b2 =20ma v cc =-150v - - 1 s storage time t stg - - 4 fall time t f - - 1
1999. 11. 16 2/2 KTA1703 revision no : 4 c 0 collector current i (a) collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta collector current i (ma) 0 c 0 collector emitter voltage v (v) ce reverse bias safe operating area 10 dc current gain h 1 fe 100 -1k -100 -10 -0.1 collector current i (ma) c 0 collector emitter voltage v (v) ce ce c i - v h - i safe operating area ce collector emitter voltage v (v) -1 -10 -100 -1k c -0.001 collector current i (a) -2 -4 -6 -8 -10 -0.1 -0.2 -0.3 -0.4 -0.5 i =-20 0 ma b -180ma -160ma -140ma -120ma -100ma -80ma -60ma -40ma -20ma fe c -0.3 -1 -3 -30 -300 3 30 300 1k common emitter ta=25 c v =-5v ce c i /i =10 -10 -3 -0.3 -0.03 -300 -30 -3 -1 -0.3 c be(sat) v , v - i c collector current i (ma) -0.1 -10 -100 -1k -1 -0.01 saturation voltage -0.1 ce(sat) v , v (v) be(sat) ce(sat) b -100 -200 -300 -400 -500 -50 -100 -150 -200 -250 v , v ceo(sus) cex(sus) -3 -30 -300 -0.01 -0.1 -1 -10 -0.003 -0.03 -0.3 -3 i (pulse) max.* c 10 s * 10 0 s * 1 ms* dc d issip a tio n s/ b l i mi te d l imite d v max. ceo(sus) p (w) 50 100 150 2 4 6 8 10 12 v be(sat) ce(sat) v 200 * single nonrepetive pulse tc=25 c curves must be dreated linearly with increase in temperature ta=tc infinite heat sink
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